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| IRG4BC30FD1PBF www.irf.com 1 = e g n-channel c fast copack igbt insulated gate bipolar transistor with hyperfast diode ! "# $ %&$'( ) * + $ ,# &$'( + -./ 00 ) + # &+(1 !2' # $ %&$'(3 +) 0*0 # &$'(3 0 # -./ &$'(3# 4 ) + 0 5 ** # 6 to-220ab absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 31 i c @ t c = 100c continuous collector current 17 a i cm pulse collector current (ref.fig.c.t.5) 124 i lm clamped inductive load current 124 i f @ t c = 100c diode continuous forward current 8 i fm diode maximum forward current 16 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 100 w p d @ t c = 100c maximum power dissipation 42 t j operating junction and -55 to +150 t stg storage temperature range c storage temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 1.2 c/w r jc junction-to-case- diode ??? ??? 2.0 r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 80 wt weight ??? 2.0 (0.07) ??? g (oz.) IRG4BC30FD1PBF 2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.69?v/c v ge = 0v, i c = 1ma ? 1.59 1.8 i c = 17a v ge = 15v v ce(on) collector-to-emitter voltage ? 1.99 ? v i c = 31a see fig. 2, 5 ?1.7? i c = 17a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 250a ? v ge(th) / ? t j threshold voltage temp. coefficient ? -11 ? mv/ c v ce = v ge , i c = 250 a gfe forward transconductance 6.1 10 ? s v ce = 100v, i c = 17a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 600v ? ? 2500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ? 2.0 2.4 v i f = 8.0a see fig. 13 ?1.31.8 i f = 8.0a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 57 62 i c = 17a q ge gate-to-emitter charge (turn-on) ? 10 12 nc v cc = 400v see fig. 8 q gc gate-to-collector charge (turn-on) ? 21 24 v ge = 15v t d(on) turn-on delay time ? 22 ? t j = 25c t r rise time ? 24 ? ns i c = 17a, v cc = 480v t d(off) turn-off delay time ? 250 320 v ge = 15v, r g = 23 ? t f fall time ? 160 210 energy losses inlcude "tail" and e on turn-on switching loss ? 370 ? diode reverse recovery. e off turn-off switching loss ? 1420 ? j see fig. 9, 10, 11, 18 e ts total switching loss ? 1800 2290 t d(on) turn-on delay time ? 21 ? t j = 150c see fig. 9,10,11,18 t r rise time ? 25 ? ns i c = 17a, v cc = 480v t d(off) turn-off delay time ? 400 ? v ge = 15v, r g = 23 ? t f fall time ? 340 ? energy losses inlcude "tail" and e ts total switching loss ? 3280 ? j diode reverse recovery. l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 1170 ? v ge = 0v c oes output capacitance ? 100 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 11 ? f = 1.0mhz t rr diode reverse recovery time ? 46 61 ns t j = 25c see fig. ?8593 t j = 125c 14 i rr diode peak reverse recovery current ? 4.8 6.5 a t j = 25c see fig. ?8.510 t j = 125c 15 q rr diode reverse recovery charge ? 110 190 nc t j = 25c see fig. 410 550 t j = 125c 16 di (rec)m /dt diode peak rate of fall of recovery ? 260 ? a/s t j = 25c see fig. during t b ?270? t j = 125c 17 v r = 200v di/dt 200a/s conditions conditions i f = 12a IRG4BC30FD1PBF www.irf.com 3 ! "! 1 10 100 1000 110 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 1 10 100 1000 5678910111213 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 50v 5s pulse width cc IRG4BC30FD1PBF 4 www.irf.com #$%%&"" !%'% () &%*+ ) % #$%% % 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature (c) j i = 8.5a i = 17a i = 34a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0 10 20 30 40 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge IRG4BC30FD1PBF www.irf.com 5 ,-!+ ) % ,-!+ . / .!+ .&%*+ &%*+ 0 10 20 30 40 50 r g , gate resistance ( ? ) 1600 1700 1800 1900 2000 t o t a l s w i c h i n g l o s s e s ( m j ) v ce = 480v v ge = 15v t j = 25c i c = 17a 1 10 100 1000 v ce , collector-toemitter-voltage(v) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 0 102030405060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v cc = 400v i c = 17a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , juntion temperature (c) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 t o t a l s w i c h i n g l o s s e s ( m j ) r g = 22? v ge = 15v v cc = 480v i c = 34a i c = 8.5a i c = 17a IRG4BC30FD1PBF 6 www.irf.com "", ,-!+ &% 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j #$%% -*+ ' - -*+ * 0*1 ' -' 0 1 0.1 1 10 100 01234 t = 175 ? c t = 150 ? c t = 25 ? c j j j 0 10 20 30 40 i c , collecto-to-emitter (a) 1000 2000 3000 4000 5000 6000 7000 8000 t o t a l s w i c h i n g l o s s e s ( m j ) r g = 22? t j = 150c v ce = 480v v ge = 15v IRG4BC30FD1PBF www.irf.com 7 / / 2 / 2 ,!+ 2 2 2 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 25 50 75 100 125 150 175 200 t r r ( n s ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 100 200 300 400 500 600 700 800 900 1000 q r r ( n c ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 200 400 600 800 1000 1200 1400 d i ( r e c ) m / d t ( a / s ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 5 10 15 20 i r r m ( a ) v r = 390v t j = 25c _____ t j = 125c ---------- i f = 16a i f = 8a IRG4BC30FD1PBF 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce ! " # $ $ % t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = & ! " '() $ vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt & ! " '( ) $ & ! " '( ) $ % 7& 7 & & 7 & IRG4BC30FD1PBF www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v fig. 19 - clamped inductive load test circuit fig. 20 - pulsed collector current test circuit fig.18e - macro waveforms for figure 18a's test circuit 0 - vcc r l icm vcc = 480f pulsed collector current test circuit IRG4BC30FD1PBF 10 www.irf.com notes: *+ , -. + / 012 3" + -. ' (. %( -.4.56* -7 ? 8 ' 9 / (.5 1" .': . 9 / '.5 / ' energy losses include "tail" and diode reverse recovery, using diode fd100h06a5. data and specifications subject to change without notice. this product has been designed and qualifie d for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2010 note: "p" in assembly line position indicates "lead-free" |
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